IR PHOTODETECTOR WITH EXCLUSION EFFECT AND SELF-FILTERING N+ LAYER

被引：5

作者：

DJURIC, Z

JOVIC, V

MATIC, M

JAKSIC, Z

机构：

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 13期

关键词：

D O I：

10.1049/el:19900607

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 'vertical' exclusion homoepitaxial n+n structure for infrared photodetectors in nonequilibrium with certain advantages when comparison with 'horizontal' n+n structures is proposed. The exclusion effect was observed at 220 K in experimental InSb n+n structures fabricated by liquid phase epitaxy. It was not possible to utilise the benefits of the suppression of Auger recombination because of the low Shockley-Read lifetime in the substrate.

引用

页码：929 / 931

页数：3

共 14 条

[1] ABSORPTION CONSTANT OF PB1-XSNXTE AND HG1-XCDXTE ALLOYS [J].

ANDERSON, WW .

INFRARED PHYSICS, 1980, 20 (06) :363-372

[2] NONEQUILIBRIUM DEVICES FOR INFRARED DETECTION [J].

ASHLEY, T ;

ELLIOTT, CT .

ELECTRONICS LETTERS, 1985, 21 (10) :451-452

[3] NONEQUILIBRIUM MODES OF OPERATION FOR INFRARED DETECTORS [J].

ASHLEY, T ;

ELLIOTT, CT ;

HARKER, AT .

INFRARED PHYSICS, 1986, 26 (05) :303-315

[4]

ASHLEY T, 1985, SPIE, V572, P123

[5] QUANTUM EFFICIENCY AND RESPONSIVITY OF INSB PHOTODIODES UTILIZING THE MOSS-BURSTEIN EFFECT [J].

DJURIC, Z ;

LIVADA, B ;

JOVIC, V ;

SMILJANIC, M ;

MATIC, M ;

LAZIC, Z .

INFRARED PHYSICS, 1989, 29 (01) :1-7

[6] CADMIUM MERCURY TELLURIDE INFRARED DETECTORS [J].

ELLIOTT, CT .

JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :453-461

[7]

Jost S. R., 1987, Materials for Infrared Detectors and Sources Symposium, P429

[8]

KRUSE PW, 1970, SEMICONDUCT SEMIMET, V5, P15

[9] CHARACTERISTICS OF NORMAL-TYPE INSB [J].

PINES, MY ;

STAFSUDD, OM .

INFRARED PHYSICS, 1979, 19 (05) :563-569

[10] RECOMBINATION PROCESSES IN INTRINSIC SEMICONDUCTORS USING IMPACT IONIZATION CAPTURE CROSS-SECTIONS IN INDIUM-ANTIMONIDE AND MERCURY CADMIUM TELLURIDE [J].

PINES, MY ;

STAFSUDD, OM .

INFRARED PHYSICS, 1980, 20 (02) :73-91

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