HIGH-SPEED LOW-POWER LOGIC ICS USING QUASI-NORMALLY-OFF GAAS-MESFETS

被引：9

作者：

NUZILLAT, G

BERT, G

DAMAYKAVALA, F

ARNODO, C

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1981年 / 16卷 / 03期

关键词：

D O I：

10.1109/JSSC.1981.1051577

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：226 / 232

页数：7

共 13 条

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[3]

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[8] GAAS GIGABIT LOGIC-CIRCUITS USING NORMALLY-OFF MESFETS [J].

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ELECTRONICS LETTERS, 1980, 16 (09) :315-316

[9] QUASI-NORMALLY-OFF MESFET LOGIC FOR HIGH-PERFORMANCE GAAS ICS [J].

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[10]

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