CHARACTERIZATION OF GAN EPITAXIAL LAYERS USING CATHODOLUMINESCENCE

被引：12

作者：

LIU, SS

CASS, TR

STEVENSON, DA

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

[2] HEWLETT PACKARD CO,LABS,PALO ALTO,CA 94304

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1977年 / 6卷 / 03期

关键词：

D O I：

10.1007/BF02660487

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：237 / 252

页数：16

共 15 条

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[7] PREPARATION OF MG-DOPED GAN DIODES EXHIBITING VIOLET ELECTROLUMINESCENCE [J].

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STEVENSON, DA ;

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[8] EFFECTS OF BUILT-IN STRAIN ON LUMINESCENCE AND ABSORPTION-SPECTRA OF GAN EPITAXIAL CRYSTALS [J].

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[9] PREPARATION OF EPITAXIAL GALLIUM-NITRIDE [J].

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[10]

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