CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN (CVD W) AS SUB-MICRON INTERCONNECTION AND VIA STUD

被引:26
作者
LEE, PI
CRONIN, J
KAANTA, C
机构
关键词
D O I
10.1149/1.2097203
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:2108 / 2112
页数:5
相关论文
共 21 条
[1]  
BLACK J, 1969, IEEE T ELECTRON DEV, P338
[2]  
BRYANT W, 1969, ELECTROCHEMICAL SOC, P409
[3]   KINETICS OF TUNGSTEN DEPOSITION BY REACTION OF WF6 AND HYDROGEN [J].
BRYANT, WA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) :1534-1543
[4]  
CHATTERJEE S, 1988, JUN V MIC C, P268
[5]  
CHIU K, 1986, TUNGSTEN OTHER REFRA, V2, P177
[6]  
CROWDER B, 1987, TUNGSTEN OTHER REFRA, V3
[7]  
Curry J., 1984, 22nd Annual Proceedings on Reliability Physics 1984 (Catalog No. 84CH1990-1), P6, DOI 10.1109/IRPS.1984.362013
[8]   BASIC CHEMISTRY AND MECHANISMS OF PLASMA-ETCHING [J].
FLAMM, DL ;
DONNELLY, VM ;
IBBOTSON, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01) :23-30
[9]  
FOSTER R, 1987, TUNGSTEN OTHER REFRA, V3, P69
[10]   COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J].
GEIPEL, HJ ;
HSIEH, N ;
ISHAQ, MH ;
KOBURGER, CW ;
WHITE, FR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1417-1424