IMPLANTED INTERSTITIAL BORON ATOMS IN SILICON

[1] CHENG LJ, 1968, RADIATION EFFECTS SE, P143

[2] PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN P-TYPE SILICON - BORON INTERSTITIAL AND ALUMINUM INTERSTITIAL DEFECTS [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 647 - &

[3] EERNISSE EP, 1971, 2 P INT C ION IMPL C

[4] LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (08) : 313 - +

[5] CHANNELING STUDY OF BORON-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 126 - &

[6] PLOTNIKOV AF, 1963, SOV PHYS-SOL STATE, V4, P2616

[7] Watkins G. D., 1964, EFFETS RAYONNEMENTS, P97

[8] WATKINS GD, 1968, S RADIATION EFFECTS

[9] WATKINS GD, 1965, PHYS REV, V138, pA555

[10] WEIGEL C, UNPUBLISHED

[1] CHENG LJ, 1968, RADIATION EFFECTS SE, P143

[2] PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN P-TYPE SILICON - BORON INTERSTITIAL AND ALUMINUM INTERSTITIAL DEFECTS [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 647 - &

[3] EERNISSE EP, 1971, 2 P INT C ION IMPL C

[4] LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (08) : 313 - +

[5] CHANNELING STUDY OF BORON-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 126 - &

[6] PLOTNIKOV AF, 1963, SOV PHYS-SOL STATE, V4, P2616

[7] Watkins G. D., 1964, EFFETS RAYONNEMENTS, P97

[8] WATKINS GD, 1968, S RADIATION EFFECTS

[9] WATKINS GD, 1965, PHYS REV, V138, pA555

[10] WEIGEL C, UNPUBLISHED