DEPOSITION OF THE REACTIVE METALS AL AND IN ONTO SPUTTERED AND CLEAVED HG1-XCDXTE SURFACES

被引：18

作者：

DAVIS, GD ^{[1
]}

BECK, WA ^{[1
]}

NILES, DW ^{[1
]}

COLAVITA, E ^{[1
]}

MARGARITONDO, G ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 09期

关键词：

D O I：

10.1063/1.337802

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3150 / 3156

页数：7

共 24 条

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[6] INTERACTION OF THIN-LAYERS OF AL AND GE WITH CLEAVED (HG,CD)TE SURFACES [J].

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[7] INTERACTIONS BETWEEN CLEAVED (HG, CD)TE SURFACES AND DEPOSITED OVERLAYERS OF AL AND INDIUM [J].

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[8] DEPOSITION OF THE UNREACTIVE METAL AU ONTO SPUTTERED AND CLEAVED HG1-XCDXTE SURFACES [J].

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[9] DEPOSITION OF AU OVERLAYERS ONTO CLEAVED (HG,CD)TE SURFACES [J].

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[10] ANODIC OXIDE COMPOSITION AND HG DEPLETION AT THE OXIDE-SEMICONDUCTOR INTERFACE OF HG1-XCDXTE [J].

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