ION-BEAM ASSISTED DEPOSITION OF SUBSTOICHIOMETRIC SILICON-NITRIDE

[1] BORDERS JA, 1971, ION IMPLANTATION SEM, P241

[2] BRIGHTON DR, UNPUB

[3] MODIFICATION OF NIOBIUM FILM STRESS BY LOW-ENERGY ION-BOMBARDMENT DURING DEPOSITION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 349 - 354

[4] DONOVAN EP, IN PRESS MRS S P SER, V71

[5] ALGORITHMS FOR THE RAPID SIMULATION OF RUTHERFORD BACKSCATTERING SPECTRA [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 9 (03) : 344 - 351

[6] EDWARDS DF, 1985, HDB OPTICAL CONSTANT, P566

[7] EFFECTS OF THERMAL ANNEALING ON THE REFRACTIVE-INDEX OF AMORPHOUS-SILICON PRODUCED BY ION-IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 172 - 174

[8] OPTICAL EFFECTS RESULTING FROM DEEP IMPLANTS OF SILICON WITH NITROGEN AND PHOSPHORUS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 81 - 86

[9] HUBLER GK, 1985, P SOC PHOTO-OPT INST, V530, P222, DOI 10.1117/12.946490

[10] REFRACTIVE-INDEX PROFILES AND RANGE DISTRIBUTIONS OF SILICON IMPLANTED WITH HIGH-ENERGY NITROGEN [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 7147 - 7155

[1] BORDERS JA, 1971, ION IMPLANTATION SEM, P241

[2] BRIGHTON DR, UNPUB

[3] MODIFICATION OF NIOBIUM FILM STRESS BY LOW-ENERGY ION-BOMBARDMENT DURING DEPOSITION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 349 - 354

[4] DONOVAN EP, IN PRESS MRS S P SER, V71

[5] ALGORITHMS FOR THE RAPID SIMULATION OF RUTHERFORD BACKSCATTERING SPECTRA [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 9 (03) : 344 - 351

[6] EDWARDS DF, 1985, HDB OPTICAL CONSTANT, P566

[7] EFFECTS OF THERMAL ANNEALING ON THE REFRACTIVE-INDEX OF AMORPHOUS-SILICON PRODUCED BY ION-IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 172 - 174

[8] OPTICAL EFFECTS RESULTING FROM DEEP IMPLANTS OF SILICON WITH NITROGEN AND PHOSPHORUS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 81 - 86

[9] HUBLER GK, 1985, P SOC PHOTO-OPT INST, V530, P222, DOI 10.1117/12.946490

[10] REFRACTIVE-INDEX PROFILES AND RANGE DISTRIBUTIONS OF SILICON IMPLANTED WITH HIGH-ENERGY NITROGEN [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 7147 - 7155