DEEP IMPURITY LEVELS AND DIFFUSION-COEFFICIENT OF MANGANESE IN SILICON

Manganese-related deep levels in n- and p-type silicon have been investigated by deep level transient spectroscopy and Hall effect. Two electron traps of E(c) - (0.12 +/- 0.01) eV and E(c) - (0.41 +/- 0.01) eV, and a hole trap of E(v) + (0.32 +/- 0.01) eV are found in manganese-doped silicon. The energy levels of these traps correspond to the transitions between four charge states (Mn-, Mn-degrees, Mn+, Mn++) of interstitial manganese. An additional donor-type electron trap of E(c) - (0.51 +/- 0.02) eV is observed in the n-type samples, and the trap can be tentatively assigned to substitutional manganese. Furthermore, an electron trap of E(c) - (0.50 +/- 0.02) eV is observed for n+ p junction samples diffused with manganese in boron-doped p-type silicon. The trap is attributed to the manganese-boron complex, which is formed owing to the pairing reaction of interstitial manganese and substitutional boron. From the investigation of the pairing reaction, the diffusion coefficient D(Mn) of interstitial manganese is determined in the temperature range 14-90-degrees-C. It can be represented by the expression D(Mn) = 2.4 X 10(-3) exp( -0.72/kT)cm2 s-1.