ASSESSMENT BY INSITU ELLIPSOMETRY OF COMPOSITION PROFILES OF GA1-XALXAS-GAAS HETEROSTRUCTURES

被引：19

作者：

HOTTIER, F

LAURENCE, G

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 11期

关键词：

D O I：

10.1063/1.92200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：863 / 865

页数：3

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