COMPENSATION IN GE-DOPED P-TYPE GA1-XALX AS GROWN BY LIQUID-PHASE EPITAXY

被引：8

作者：

SWAMINATHAN, V

ANTHONY, PJ

ZILKO, JL

STURGE, MD

SCHUMAKER, NE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 09期

关键词：

D O I：

10.1063/1.329493

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5603 / 5607

页数：5

共 15 条

[1] SULFUR DOPING IN AL0.4GA0.6AS [J].

ANTHONY, PJ ;

ZILKO, JL ;

SWAMINATHAN, V ;

SCHUMAKER, NE ;

WAGNER, WR ;

NORBERG, JC .

APPLIED PHYSICS LETTERS, 1981, 38 (06) :434-436

[2]

CASEY HC, 1978, HETEROSTRUCTURE LA B

[3]

Dean P. J., 1973, PROGR SOLID STATE CH, V8, P1

[4]

KRESSEL H, 1977, SEMICONDUCTOR LASERS, P338

[5] OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS [J].

LOGAN, RA ;

REINHART, FK .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4172-4176

[6] THE TRANSITION TO THE METALLIC STATE [J].

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1961, 6 (62) :287-309

[7]

Nathan M. I., 1966, PHYSICS QUANTUM ELEC, P478

[8]

PANKOVE JI, 1971, OPTICAL PROCESSES SE, P151

[9] ISOTHERMAL DIFFUSION-THEORY OF LPE - GAAS, GAP, BUBBLE GARNET [J].

RODE, DL .

JOURNAL OF CRYSTAL GROWTH, 1973, 20 (01) :13-23

[10] PHOTO-LUMINESCENCE OF THERMALLY TREATED N+ SI-DOPED AND SEMI-INSULATING CR-DOPED GAAS SUBSTRATES [J].

SWAMINATHAN, V ;

SCHUMAKER, NE ;

ZILKO, JL .

JOURNAL OF LUMINESCENCE, 1981, 22 (02) :153-170

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