ATOMICALLY RESOLVED INP(110) SURFACE OBSERVED WITH NONCONTACT ULTRAHIGH-VACUUM ATOMIC-FORCE MICROSCOPE

被引：113

作者：

UEYAMA, H

OHTA, M

SUGAWARA, Y

MORITA, S

机构：

[1] Department of Physics, Hiroshima University, Higashi-Hiroshima, Hiroshima, 739

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 8B期

关键词：

INP; ATOMIC FORCE MICROSCOPE; ULTRAHIGH VACUUM; NONCONTACT; FM DETECTION; ATOMIC DEFECT; TRUE ATOMIC RESOLUTION;

D O I：

10.1143/JJAP.34.L1086

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic resolution imaging of the cleaved InP(110) surface was demonstrated using an ultrahigh vacuum atomic force microscope (UHV-AFM) in a noncontact mode, for the first time. The force gradient acting on the tip was detected by the frequency modulation (FM) detection method. A rectangular lattice could be clearly resolved. Atomic defects were also clearly and reproducibly observed. These results suggest that the noncontact UHV-AFM has potential for imaging III-V compound semiconductor surfaces with true atomic-scale lateral resolution.

引用

收藏

页码：L1086 / L1088

页数：3

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