ELECTRICAL CHARACTERIZATION OF 2H-SNS2 SINGLE-CRYSTALS SYNTHESIZED BY THE LOW-TEMPERATURE CHEMICAL VAPOR TRANSPORT METHOD

被引：18

作者：

SHIBATA, T

MURANUSHI, Y

MIURA, T

KISHI, T

机构：

[1] Department of Applied Chemistry, Faculty of Science and Technology, Keio University, Kouhokuku, Yokohama, 233

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1991年 / 52卷 / 03期

关键词：

SNS2 SINGLE CRYSTAL; VANDERPAUW METHOD; NORMAL-TYPE SEMICONDUCTOR; ELECTRICAL CONDUCTIVITY; ACTIVATION ENERGY; HALL MOBILITY; CARRIER DENSITY;

D O I：

10.1016/0022-3697(91)90190-B

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Single crystals of 2H-SnS2 synthesized by the chemical vapor transport method at 450-degrees-C were found to be n-type semiconductors with room temperature properties such as specific resistance rho = 7.30 ohm cm, Hall mobility mu-H = 18.3 cm2V-1 S-1, and carrier density n = 5.21 x 10(16) cm-3 in the c-plane according to the van der Pauw conduction measurement. The mobility mu-H decreases below 200 K and shows a peak around 65 K. mu-H shows a non-linear variation with the injection current and shows a peak at 1 mA.

引用

页码：551 / 553

页数：3

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