QUANTIZED CONDUCTANCE IN A LONG SILICON INVERSION WIRE

被引：21

作者：

TANG, YS

JIN, G

DAVIES, JH

WILLIAMSON, JG

WILKINSON, CDW

机构：

[1] Nanoelectronics Research Center, Department of Electronics and Electrical Engineering, University of Glasgow

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.45.13799

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Quantized conductance with a step size of less than e2/h, which increases linearly with increasing perpendicular magnetic field, and resonant tunneling through an impurity state in a long silicon inversion wire have been observed at 4.2 K. This is approximately understood by considering a quantum point contact, an impurity state, and a large gate-voltage-dependent resistor in series.

引用

页码：13799 / 13802

页数：4

共 15 条

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