FABRICATION OF SUB-50NM POLY-SI/SIO2/SI NARROW WIRES USING ELECTRON-BEAM LITHOGRAPHY AND CF4/O2 REACTIVE ION ETCHING

被引：4

作者：

TANG, YS

CHEUNG, R

WILKINSON, CDW

机构：

[1] Department of Electronics and Electrical Engineering University of Glasgow

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 21期

关键词：

materials; Semiconductor devices;

D O I：

10.1049/el:19901166

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Poly-Si/SiO2/Si narrow wires with widths of less than 50 nm were fabricated using electron beam lithography and CF4+ 10% O2reactive ion etching techniques. The extraction of optimum processing parameters for obtaining wires with nearly perpendicular sidewalls is reported. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1823 / 1824

页数：2

共 9 条

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