ZEEMAN EFFECT IN SPECTRUM OF EXCITONS BOUND TO ISOELECTRONIC BISMUTH IN INDIUM-PHOSPHIDE

被引：27

作者：

WHITE, AM ^{[1
]}

DEAN, PJ ^{[1
]}

FAIRHURST, KM ^{[1
]}

BARDSLEY, W ^{[1
]}

DAY, B ^{[1
]}

机构：

[1] ROY RADAR ESTAB, GREAT MALVERN, WORCESTERSHIRE, ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1974年 / 7卷 / 02期

关键词：

D O I：

10.1088/0022-3719/7/2/003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L35 / L39

页数：5

共 11 条

[1]

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[2]

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[4] ISOELECTRONIC TRAP BISMUTH IN INDIUM PHOSPHIDE [J].

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[5]

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[8]

WHITE A, IN PRESS

[9] PHOTOLUMINESCENCE SPECTRA OF EXCITONS BOUND TO GROUP II ACCEPTORS IN INDIUM PHOSPHIDE [J].

WHITE, AM ;

WILLIAMS, EW ;

FAIRHURST, KM ;

BARDSLEY, W ;

DAY, B ;

DEAN, PJ .

SOLID STATE COMMUNICATIONS, 1972, 11 (09) :1099-+

[10] ZEEMAN SPECTRA OF PRINCIPAL BOUND EXCITON IN SN-DOPED GALLIUM-ARSENIDE [J].

WHITE, AM ;

HINCHLIFFE, I ;

DEAN, PJ .

SOLID STATE COMMUNICATIONS, 1972, 10 (06) :497-+

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