STIMULATED INELASTIC TUNNELING THEORY OF NEGATIVE DIFFERENTIAL RESISTANCE IN METAL-INSULATOR-METAL DIODES

被引：7

作者：

DRURY, DM ^{[1
]}

ISHII, TK ^{[1
]}

机构：

[1] MARQUETTE UNIV, DEPT ELECT ENGN, MILWAUKEE, WI 53233 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1980年 / 16卷 / 01期

关键词：

D O I：

10.1109/JQE.1980.1070338

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：58 / 69

页数：12

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