INGAAS/INGAALAS MQW LASERS WITH INGAASP GUIDING LAYERS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：14

作者：

KAWAMURA, Y

WAKATSUKI, A

NOGUCHI, Y

IWAMURA, H

机构：

[1] NTT Opto-electronics Laboratories, Kanagawa

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 11期

关键词：

D O I：

10.1109/68.97826

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InGaAs/InGaAlAs multiple quantum well (MQW) laser was grown by gas source molecular beam epitaxy (GS-MBE) for the first time. The laser has InP cladding layers and InGaAsP guiding layers, while the active layer is composed of an InGaAs/InGaAlAs MQW layer. The threshold current of the buried hetero (BH) structure MQW laser is as low as 9.6 mA. Furthermore, enhanced relaxation oscillation frequency is observed in comparison to that of the InGaAs/InGaAsP MQW lasers with the same structure.

引用

页码：960 / 962

页数：3

共 7 条

[1] VERY LOW THRESHOLD CURRENT-DENSITY SCH-MQW LASER-DIODES EMITTING AT 1.55-MU-M [J].