INGAAS/INGAALAS MQW LASERS WITH INGAASP GUIDING LAYERS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY

被引:14
作者
KAWAMURA, Y
WAKATSUKI, A
NOGUCHI, Y
IWAMURA, H
机构
[1] NTT Opto-electronics Laboratories, Kanagawa
关键词
D O I
10.1109/68.97826
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An InGaAs/InGaAlAs multiple quantum well (MQW) laser was grown by gas source molecular beam epitaxy (GS-MBE) for the first time. The laser has InP cladding layers and InGaAsP guiding layers, while the active layer is composed of an InGaAs/InGaAlAs MQW layer. The threshold current of the buried hetero (BH) structure MQW laser is as low as 9.6 mA. Furthermore, enhanced relaxation oscillation frequency is observed in comparison to that of the InGaAs/InGaAsP MQW lasers with the same structure.
引用
收藏
页码:960 / 962
页数:3
相关论文
共 7 条
[1]   VERY LOW THRESHOLD CURRENT-DENSITY SCH-MQW LASER-DIODES EMITTING AT 1.55-MU-M [J].
GLEW, RW ;
GARRETT, B ;
GREENE, PD .
ELECTRONICS LETTERS, 1989, 25 (16) :1103-1104
[2]  
GOTO K, 1990, 12TH INT SEM C DAV
[3]   LOW THRESHOLD CURRENT-DENSITY 1.5 MU-M GAINAS/AIGAINAS GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE QUANTUM-WELL LASER-DIODES GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].
KASUKAWA, A ;
BHAT, R ;
ZAH, CE ;
SCHWARZ, SA ;
HWANG, DM ;
KOZA, MA ;
LEE, TP .
ELECTRONICS LETTERS, 1991, 27 (12) :1063-1065
[4]   LOW THRESHOLD CURRENT GALNAS/ALLNAS RIDGE MQW LASERS WITH INP CLADDING LAYERS [J].
KAWAMURA, Y ;
NONAKA, K ;
MIKAMI, O .
ELECTRONICS LETTERS, 1988, 24 (10) :637-638
[5]   INGAAS/INALAS SCH-MQW LASERS WITH SUPERLATTICE OPTICAL CONFINEMENT LAYERS GROWN BY MBE [J].
KAWAMURA, Y ;
ASAI, H ;
SAKAI, Y ;
KOTAKA, I ;
NAGANUMA, M .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (01) :1-2
[6]  
KAZNIERSKI C, 1990, ELECTRON LETT, V26, P889
[7]   NARROW SPECTRAL LINEWIDTH OF MBE-GROWN GAINAS ALINAS MQW LASERS IN THE 1.55 MU-M RANGE [J].
MATSUSHIMA, Y ;
UTAKA, K ;
SAKAI, K .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (06) :1376-1380