INGAAS/INALAS SCH-MQW LASERS WITH SUPERLATTICE OPTICAL CONFINEMENT LAYERS GROWN BY MBE

被引：13

作者：

KAWAMURA, Y

ASAI, H

SAKAI, Y

KOTAKA, I

NAGANUMA, M

机构：

[1] NTT Opto-Electronics Laboratories, Morinosato Wakamiya 3-1

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 01期

关键词：

D O I：

10.1109/68.47022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAs/InAIAs separate confinement heterostructure multiple qnantum well (SCH-MQW) lasers with snperlattice optical confinement layers are grown by molecular beam epitaxy. Room temperature operation with low threshold current density of 1.7 kA/cm2 at 1.537 µm wavelength is obtained for these lasers. © 1990 IEEE

引用

页码：1 / 2

页数：2

共 10 条

[1] VERY LOW THRESHOLD CURRENT-DENSITY SCH-MQW LASER-DIODES EMITTING AT 1.55-MU-M
GLEW, RW
GARRETT, B
GREENE, PD
[J]. ELECTRONICS LETTERS, 1989, 25 (16) : 1103 - 1104
[2] IMPACT IONIZATION RATES IN AN INGAAS/INALAS SUPERLATTICE
KAGAWA, T
KAWAMURA, Y
ASAI, H
NAGANUMA, M
MIKAMI, O
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (10) : 993 - 995
[3] INGAAS/INGAALAS/INALAS/INP SCH-MQW LASER-DIODES GROWN BY MOLECULAR-BEAM EPITAXY
KAWAMURA, Y
ASAHI, H
WAKITA, K
[J]. ELECTRONICS LETTERS, 1984, 20 (11) : 459 - 460
[4] LOW THRESHOLD CURRENT GALNAS/ALLNAS RIDGE MQW LASERS WITH INP CLADDING LAYERS
KAWAMURA, Y
NONAKA, K
MIKAMI, O
[J]. ELECTRONICS LETTERS, 1988, 24 (10) : 637 - 638
[5] KOCH TB, 1989, ELECTRON LETT, V25, P516
[6] Kotaka I., 1989, IEEE Photonics Technology Letters, V1, P100, DOI 10.1109/68.34753
[7] ROOM-TEMPERATURE CW OPERATION OF MBE-GROWN GAINAS/ALINAS MQW LASERS IN 1.5 MU-M RANGE
MATSUSHIMA, Y
UTAKA, K
SAKAI, K
TAKEUCHI, O
[J]. ELECTRONICS LETTERS, 1987, 23 (24) : 1271 - 1273
[8] SUPERLATTICE OPTICAL-CAVITY MULTIPLE-QUANTUM-WELL (SOC-MQW) LASERS GROWN BY MOLECULAR-BEAM EPITAXY
SAKAKI, H
YOSHINO, J
SEKIGUCHI, Y
SAKAI, K
[J]. ELECTRONICS LETTERS, 1984, 20 (08) : 320 - 322
[9] 1.5-1.6-MU-M GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TEMKIN, H
ALAVI, K
WAGNER, WR
PEARSALL, TP
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (10) : 845 - 847
[10] FABRICATION AND CHARACTERIZATION OF LONG-WAVELENGTH, GAINAS/ALGAINAS/INP MODIFIED-MQW LASERS
WILLIAMS, PJ
ROBBINS, DJ
REID, TJ
DAVIES, JI
MARSHALL, AC
CARTER, AC
[J]. ELECTRONICS LETTERS, 1989, 25 (01) : 5 - 6

← 1 →