PLASMA-ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION OF BATIO3 FILMS

被引：19

作者：

VANBUSKIRK, PC ^{[1
]}

GARDINER, R ^{[1
]}

KIRLIN, PS ^{[1
]}

KRUPANIDHI, S ^{[1
]}

机构：

[1] PENN STATE UNIV,MAT RES LAB,UNIV PK,PA 16802

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1992年 / 10卷 / 04期

关键词：

D O I：

10.1116/1.578047

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

BaTiO3 films have been grown by plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD) for the first time. The BaTiO3 films were grown on Pt-coated Si substrates in an inverted vertical reactor with a remote O2 plasma at 450 mTorr. Plasma powers exceeding 10 W reduced or eliminated the presence of CO3 in the as-grown films at 525 and 600-degrees-C, respectively. Films deposited at 600-degrees-C by PE-MOCVD were polycrystalline BaTiO3 with perovskite structure and partial texture in the [100] direction; films grown at 525-degrees-C were amorphous. The polycrystalline BaTiO3 films had dielectric constants as large as 300, loss tangents of 0.02, and resistivities exceeding 10(9) OMEGA-cm at room temperature.

引用

页码：1578 / 1583

页数：6

共 18 条

[1]

DIDOMENICO M, 1968, PHYS REV, V174, P522, DOI 10.1103/PhysRev.174.522

[2] PLASMA STIMULATED MOCVD OF GAAS [J].