CAPACITANCE VOLTAGE ANALYSIS AND CURRENT MODELING OF PULSE-DOPED MODFETS

被引:12
作者
ROBLIN, P
ROHDIN, H
HUNG, CJ
CHIU, SW
机构
[1] MOTOROLA INC,AUSTIN,TX 75252
[2] HEWLETT PACKARD CO,PALO ALTO,CA 94304
关键词
D O I
10.1109/16.43659
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2394 / 2404
页数:11
相关论文
共 34 条
[1]   GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].
ADACHI, S .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29
[2]  
CHIU SW, 1987, THESIS OHIO STATE U
[3]   METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J].
DELAGEBEAUDEUF, D ;
LINH, NT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) :955-960
[4]   MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J].
DRUMMOND, TJ ;
MORKOC, H ;
LEE, K ;
SHUR, M .
ELECTRON DEVICE LETTERS, 1982, 3 (11) :338-341
[5]   GENERAL THEORY FOR PINCHED OPERATION OF JUNCTION-GATE FET [J].
GREBENE, AB ;
GHANDHI, SK .
SOLID-STATE ELECTRONICS, 1969, 12 (07) :573-+
[6]   EXPLICIT LOCAL EXCHANGE-CORRELATION POTENTIALS [J].
HEDIN, L ;
LUNDQVIS.BI .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (14) :2064-&
[7]   SELECTIVE DRY ETCHING OF ALGAAS-GAAS HETEROJUNCTION [J].
HIKOSAKA, K ;
MIMURA, T ;
JOSHIN, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :L847-L850
[8]  
Hueschen M., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P348
[9]  
KANG SC, UNPUB MICROWAVE CHAR
[10]  
KIM YM, 1986, IEEE T ELECTRON DEV, V33, P1644