A NUMERICAL-ANALYSIS FOR THE SMALL-SIGNAL RESPONSE OF THE MOS CAPACITOR

被引：6

作者：

GAITAN, M

MAYERGOYZ, ID

机构：

[1] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20742

[2] INST ADV COMP STUDIES,COLLEGE PK,MD

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 03期

关键词：

D O I：

10.1016/0038-1101(89)90093-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：207 / 213

页数：7

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