RESONANT INVERSE-PHOTOEMISSION STUDY OF LAYER-DEPENDENT SURFACE-STATES AT THE EPITAXIAL GAAS(110)-BI INTERFACE

被引：35

作者：

MCLEAN, AB

HIMPSEL, FJ

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.40.8425

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8425 / 8430

页数：6

共 31 条

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