EFFECT OF DEUTERIUM ANNEAL ON SIO2/SI(100) INTERFACE TRAPS AND ELECTRON-SPIN-RESONANCE SIGNALS OF ULTRATHIN SIO2-FILMS

Anneal kinetics of the SiO2/Si(100) interface defects of 5-nm-thick SiO2 films have been investigated through comparison of the electron spin resonance (ESR) center with the interface trap density D(it). The ESR signal showed two distinct defects (so-called P(b0) and P(b1)) at the SiO2/Si(100) interface: These P(b0) and P(b1) defects are annihilated by a low-temperature (500-degrees-C) deuterium (D2) anneal. By contrast, the D2 anneal at 900-degrees-C causes an increase in the number of the defects after a decrease at the initial stage (< 10 s). We conclude that there are annihilation and dissociation processes causing the P(b0) and P(b1) defects, dependent on the D2 anneal time and temperature.