QUENCHING EFFECT OF LUMINESCENCE IN BULK SEMI-INSULATING GAAS

被引：51

作者：

LEYRAL, P

VINCENT, G

NOUAILHAT, A

GUILLOT, G

机构：

来源：

SOLID STATE COMMUNICATIONS | 1982年 / 42卷 / 01期

关键词：

D O I：

10.1016/0038-1098(82)91031-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：67 / 69

页数：3

共 19 条

[11]

MARTIN GM, 1980, UNPUB I PHYS C SER

[12] STUDY OF MAIN ELECTRON TRAP IN GA1-XINXAS ALLOYS [J].

MIRCEA, A ;

MITONNEAU, A ;

HALLAIS, J .

PHYSICAL REVIEW B, 1977, 16 (08) :3665-3675

[13] A LUMINESCENCE BAND ASSOCIATED WITH THE MAIN ELECTRON TRAP IN BULK GALLIUM-ARSENIDE [J].

MIRCEAROUSSEL, A ;

MAKRAMEBEID, S .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :1007-1009

[14] AUGER DEEXCITATION OF A METASTABLE STATE IN GAAS [J].

MITONNEAU, A ;

MIRCEA, A .

SOLID STATE COMMUNICATIONS, 1979, 30 (03) :157-162

[15]

PEKA GP, 1978, SOV PHYS SEMICOND+, V12, P540

[16] LUMINESCENCE OF GAAS GROWN IN OXYGEN [J].

TURNER, WJ ;

AINSLIE, NG ;

PETTIT, GD .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) :3274-&

[17]

VINCENT G, 1978, SOLID STATE COMMUN, V27, P731

[18]

VINCENT G, UNPUB J APPL PHYS

[19]

YU PW, 1979, SOLID ST COMM, V32, P111

← 1 2 →