COLOR-BAND GENERATION DURING HIGH DOSE ION-IMPLANTATION OF SILICON WAFERS

被引：5

作者：

BEANLAND, DG ^{[1
]}

CHIVERS, DJ ^{[1
]}

机构：

[1] AERE,DIV CHEM,HARWELL OX11 0RA,OXFORDSHIRE,ENGLAND

来源：

关键词：

D O I：

10.1149/1.2131673

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1331 / 1338

页数：8

共 25 条

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[22] PARRY PD, 1976, J VAC SCI TECHNOL, V13, P623
[23] VISIBLE INTERFERENCE EFFECTS IN SILICON CAUSED BY HIGH-CURRENT-HIGH-DOSE IMPLANTATION
SEIDEL, TE
PASTEUR, GA
TSAI, JCC
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (10) : 648 - 651
[24] Shannon J. M., 1970, Radiation Effects, V6, P217, DOI 10.1080/00337577008236300
[25] [No title captured]