TEMPERATURE-DEPENDENCE OF ENERGY-GAP OF MGXZN1-XTE SEMICONDUCTORS ALLOYS

被引：24

作者：

BARBIER, D

MONTEGU, B

LAUGIER, A

机构：

来源：

SOLID STATE COMMUNICATIONS | 1978年 / 28卷 / 07期

关键词：

D O I：

10.1016/0038-1098(78)90481-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：525 / 528

页数：4

共 17 条

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[8] ENERGY-GAP VARIATIONS IN SEMICONDUCTOR ALLOYS [J].

HILL, R .

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[9] LUMINESCENCE AND BANDGAP STUDIES OF HIGH-PURITY MGXZN1-XTE TERNARY ALLOYS [J].

MARINE, J ;

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[10]

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