A STUDY OF NATIVE OXIDES OF BETA-SIC USING AUGER-ELECTRON SPECTROSCOPY

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 525 - 527

[2] CHAUDHRY MI, 1986, THESIS U NOTRE DAME

[3] ELLIS RC, SILICON CARBIDE 1959, P20

[4] FITZER E, 1974, SILICON CARBIDE 73, P321

[5] GRANT RW, 1980, PHYSICS MOS INSULATO

[6] EPITAXIAL-GROWTH AND CHARACTERIZATION OF BETA-SIC THIN-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (03) : 642 - 648

[7] HIGH-TEMPERATURE ELECTRONIC REQUIREMENTS IN AEROPROPULSION SYSTEMS [J]. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 1982, 29 (02) : 103 - 106

[8] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462

[9] NISHINO S, 1983, 15TH C SOL STAT DEV, P317

[10] PARSONS JD, 1985, SOLID STATE TECH NOV, P133

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 525 - 527

[2] CHAUDHRY MI, 1986, THESIS U NOTRE DAME

[3] ELLIS RC, SILICON CARBIDE 1959, P20

[4] FITZER E, 1974, SILICON CARBIDE 73, P321

[5] GRANT RW, 1980, PHYSICS MOS INSULATO

[6] EPITAXIAL-GROWTH AND CHARACTERIZATION OF BETA-SIC THIN-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (03) : 642 - 648

[7] HIGH-TEMPERATURE ELECTRONIC REQUIREMENTS IN AEROPROPULSION SYSTEMS [J]. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 1982, 29 (02) : 103 - 106

[8] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462

[9] NISHINO S, 1983, 15TH C SOL STAT DEV, P317

[10] PARSONS JD, 1985, SOLID STATE TECH NOV, P133