DEFECT-CONTROLLED CARRIER TRANSPORT IN AMORPHOUS SIO2

被引：48

作者：

LUCOVSKY, G

机构：

[1] Xerox Palo Alto Research Center, Palo Alto, CA

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1979年 / 39卷 / 06期

关键词：

D O I：

10.1080/13642817908246003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The defect-controlled transport properties of the photogenerated electrons in amorphous SiO2, the low-temperature mobility of approximately 40 cm2 V–1 s–1 and the lifetime of approximately 1·4 ×10–8s, are shown to be determined by interaction with neutral intimate-valence-alternation pairs, defects consisting of charged, and over- and under-coordinated oxygen atoms, C3+ and C1- respectively. The holes move by small-polaron hopping, and a dispersive character in their transport may be associated with trapping at the same defects. © 1979 Taylor & Francis Ltd.

引用

页码：531 / 540

页数：10

共 37 条

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