FORMATION OF AMORPHOUS INTERLAYERS BY SOLID-STATE DIFFUSION IN ULTRAHIGH-VACUUM-DEPOSITED POLYCRYSTALLINE NB AND TA THIN-FILMS ON (111)SI

被引：9

作者：

CHENG, JY

CHEN, LJ

机构：

[1] Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 01期

关键词：

D O I：

10.1063/1.104438

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of amorphous interlayers (alpha-interlayers) in ultrahigh-vacuum-deposited polycrystalline Nb and Ta thin films on (111)Si has been studied by cross-sectional transmission electron microscopy. The growth of alpha-interlayers was found to follow a linear growth law initially in samples annealed at 450-500-degrees-C and 550-625-degrees-C for Nb/Si and Ta/Si, respectively. The growth then slows down and deviates from a linear growth behavior as a critical thickness of the alpha-interlayer was reached. The alpha-interlayer/crystalline Si interface was found to be rather smooth. The roughness of the interface between the Nb layer and alpha-interlayer was observed to decrease with annealing temperature and time. The observation suggested that the growth of the alpha-interlayer was interface reaction controlled initially.

引用

页码：45 / 47

页数：3

共 21 条

[1] DISORDERED INTERMIXING AT THE PLATINUM-SILICON INTERFACE DEMONSTRATED BY HIGH-RESOLUTION CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY, AUGER-ELECTRON SPECTROSCOPY, AND MEV ION CHANNELING [J].