LOW-TEMPERATURE GROWTH OF ZNSE/GAAS USING HOT MOLECULAR-BEAMS

被引：15

作者：

OHISHI, M

SAITO, H

YONETA, M

FUJISAKI, Y

机构：

[1] Department of Applied Physics, Faculty of Science, Okayama University of Science, Okayama, 700

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 117卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90729-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial layers of ZnSe/GaAs were grown successfully at the growth temperature as low as of 100-degrees-C using hot molecular beams generated by post-heating at 600-degrees-C both for Zn and Se. Although having rather inferior surface morphology, ZnSe epilayers grown at 100-150-degrees-C showed good low-temperature photoluminescence properties. The relation between the surface morphology and the growth rate, and also the role of the post-heated Se beam are discussed.

引用

页码：125 / 128

页数：4

共 7 条

[1] COMMENT ON COMPOSITION OF SELENIUM VAPOR [J].