BANDFILLING IN LIQUID-PHASE EPITAXIAL INP-IN1-XGAXP1-ZASZ-INP QUANTUM-WELL HETEROSTRUCTURE LASERS

被引：4

作者：

REZEK, EA ^{[1
]}

VOJAK, BA ^{[1
]}

HOLONYAK, N ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 11期

关键词：

D O I：

10.1063/1.324495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5398 / 5403

页数：6

共 14 条

[1] SINGLE THIN-ACTIVE-LAYER VISIBLE-SPECTRUM IN1-XGAXP1-ZASZ HETEROSTRUCTURE LASERS [J].

CHIN, R ;

HOLONYAK, N ;

KOLBAS, RM ;

ROSSI, JA ;

KEUNE, DL ;

GROVES, WO .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2551-2556

[2]

Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[3]

Dingle R, 1975, FESTKORPERPROBLEME, V15, P21

[4] ROOM-TEMPERATURE LASER OPERATION OF QUANTUM-WELL GA(1-X)ALXAS-GAAS LASER-DIODES GROWN BY ORGANOMETALLUIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD ;

HOLONYAK, N ;

REZEK, EA ;

CHIN, R .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :295-297

[5] BANDFILLING IN METALORGANIC CHEMICAL VAPOR-DEPOSITED ALXGA1-XAS-GAAS-ALXGA1-XAS QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

HOLONYAK, N ;

KOLBAS, RM ;

REZEK, EA ;

CHIN, R ;

DUPUIS, RD ;

DAPKUS, PD .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5392-5397

[6] LIMITATIONS OF DIRECT-INDIRECT TRANSITION ON IN1-XGAXP1-ZASZ HETEROJUNCTIONS [J].

HOLONYAK, N ;

CHIN, R ;

COLEMAN, JJ ;

KEUNE, DL ;

GROVES, WO .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) :635-638

[7]

KOLBAS RM, 1978, PISMA ZH TEKH FIZ, V4, P69

[8] DEFECT-ASSISTED AND PHONON-ASSISTED TUNNELING IN LPE IN1-XGAXP1-ZASZ DH LASER-DIODES (LAMBDA APPROXIMATELY 1 MUM) [J].

LUDOWISE, MJ ;

HOLONYAK, N ;

WRIGHT, PD ;

VOJAK, BA ;

REZEK, EA ;

KORB, HW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4287-4291

[9] MEASUREMENT OF EFFECTIVE MASS IN IN0.9GA0.1AS0.22P0.78 BY SHUBNIKOV-DE HAAS OSCILLATIONS [J].

RESTORFF, JB ;

HOUSTON, B ;

BURKE, JR ;

HAYES, RE .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :189-190

[10] CONFINED-CARRIER LUMINESCENCE OF A THIN IN1-+XGAXP1-ZASZ WELL (X EQUIVALENT TO 0.13, Z EQUIVALENT TO 0.29, EQUIVALENT TO 400 A) IN AN INP P-N-JUNCTION [J].

REZEK, EA ;

SHICHIJO, H ;

VOJAK, BA ;

HOLONYAK, N .

APPLIED PHYSICS LETTERS, 1977, 31 (08) :534-536

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