INFLUENCE OF PI-BONDED CLUSTERS ON THE ELECTRONIC-PROPERTIES OF DIAMOND-LIKE CARBON-FILMS

被引:22
作者
BOUNOUH, Y
THEYE, ML
DEHBIALAOUI, A
MATTHEWS, A
CERNOGORA, J
FAVE, JL
COLLIEX, C
GHEORGHIU, A
SENEMAUD, C
机构
[1] UNIV HULL,SURFACE ENGN RES CTR,KINGSTON HULL HU6 7RX,N HUMBERSIDE,ENGLAND
[2] UNIV PARIS 07,PHYS SOLIDE GRP,CNRS,UA 17,F-75251 PARIS 05,FRANCE
[3] UNIV PARIS 06,PHYS SOLIDES GRP,CNRS,UA 17,F-75251 PARIS 05,FRANCE
[4] UNIV PARIS 11,PHYS SOLIDE LAB,CNRS,LAB 2,F-91405 ORSAY,FRANCE
[5] UNIV PARIS 11,CHIM PHYS LAB,CNRS,UA 176,F-91405 ORSAY,FRANCE
关键词
D O I
10.1016/0925-9635(93)90065-A
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A comparative study of two series of a-C:H films prepared by different techniques and presenting strongly contrasting properties was carried out using several complementary techniques probing the electronic density of states and the incorporation of hydrogen. The results were analysed using a two-phase model consisting of pi-bonded clusters embedded in an amorphous sp3 C:H matrix. It is shown that the two series differ essentially in the sizes of the clusters and in the degree of confinement of the pi electrons within the clusters, and that hydrogen plays a significant role in the film microstructure and its modifications upon annealing.
引用
收藏
页码:259 / 265
页数:7
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