STUDIES BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY OF DEFECT FORMATION IN A-SI-H

被引：16

作者：

THEYE, ML

CHAHED, L

CABARROCAS, PRI

ZELLAMA, K

机构：

[1] ECOLE POLYTECH,PHYS INTERFACES & COUCHES MINCES LAB,CNRS,UNITE 258,F-91128 PALAISEAU,FRANCE

[2] UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,CNRS,UNITE 17,F-75251 PARIS 05,FRANCE

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1991年 / 63卷 / 01期

关键词：

D O I：

10.1080/01418639108224435

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical absorption spectra determined between 2 and 0.6 eV by a combination of optical transmission and photothermal deflection spectroscopy measurements for two a-Si:H samples deposited at 100 and 250-degrees-C have been carefully compared in the as-deposited, annealed and light-soaked states. The results as a whole are interpreted in a quantitative way by the recently proposed weak-bond-to-dangling-bond conversion model.

引用

页码：143 / 150

页数：8

共 23 条

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AMER NM, 1984, SEMICONDUCT SEMIMET, V21, P83

[2] STRUCTURE AND ELECTRONIC STATES IN DISORDERED-SYSTEMS [J].