ATOMICALLY CONTROLLED SURFACE AND INTERFACE, AND SEMICONDUCTOR-DEVICE PERFORMANCE

被引：4

作者：

SUGANO, T

机构：

[1] Department of Electronic Engineering, University of Tokyo, Bunkyo-ku, Tokyo, 113

来源：

APPLIED SURFACE SCIENCE | 1992年 / 60-1卷

关键词：

D O I：

10.1016/0169-4332(92)90499-N

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The importance and usefulness of atomically controlled surfaces and interfaces are discussed in conjunction with semiconductor device performance. Surface roughness scattering of carriers decreases the drift mobility. Interface roughness causes the fluctuation of the width of quantum wells and results in a broadening of the photoluminescence spectrum. Bonding defects at the dielectric-semiconductor interface work as trap states, and oxygen vacancies in SiO2 films are precursors of hole traps.

引用

页码：698 / 701

页数：4

共 5 条

[1]

Matsumoto Y., 1974, JPN J APPL PHYS PT 2, V2-2, P367

[2] CORRELATION LENGTH OF INTERFACE ROUGHNESS AND ITS ENHANCEMENT IN MOLECULAR-BEAM EPITAXY GROWN GAAS ALAS QUANTUM-WELLS STUDIED BY MOBILITY MEASUREMENT [J].