LEED-AES REEXAMINATION OF THE AL/SI(111) GAMMA-PHASE

被引：14

作者：

ZOTOV, AV

KHRAMTSOVA, EA

RYZHKOV, SV

SARANIN, AA

CHUB, AB

LIFSHITS, VG

机构：

[1] Institute of Automation and Control Processes, Far Eastern Branch, the Russian Academy of Sciences, 690041 Vladivostok

来源：

SURFACE SCIENCE | 1994年 / 316卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(94)91118-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The saturating Al adlayer grown on Si (111) at 500-700-degrees-C (so-called Al/Si(111) ''gamma-phase'') was characterized by means of low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES). The formation of the ''gamma-phase'' was found to complete upon adsorption of 0.6 monolayers of Al after which the sticking coefficient of Al drops abruptly and no additional Al can be adsorbed at temperatures above approximately 500-degrees-C. The precise examination of the LEED data revealed that the Al/Si(111) ''gamma-phase'' has an 8 x 8 periodicity.

引用

页码：L1034 / L1038

页数：5

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