INVESTIGATION OF PARAMETER SENSITIVITY OF SHORT CHANNEL MOSFETS

被引：6

作者：

SELBERHERR, S ^{[1
]}

SCHUTZ, A ^{[1
]}

POTZL, H ^{[1
]}

机构：

[1] LUDWIG BOLTZMANN INST FESTKORPERPHYS,VIENNA,AUSTRIA

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 02期

关键词：

D O I：

10.1016/0038-1101(82)90035-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：85 / 90

页数：6

共 7 条

[1]

DEMOULIN E, 1979, IEDM, P34

[2] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].

DENNARD, RH ;

GAENSSLEN, FH ;

YU, HN ;

RIDEOUT, VL ;

BASSOUS, E ;

LEBLANC, AR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268

[3] CHARACTERISTICS AND LIMITATION OF SCALED-DOWN MOSFETS DUE TO 2-DIMENSIONAL FIELD-EFFECT [J].

MASUDA, H ;

NAKAI, M ;

KUBO, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) :980-986

[4] MINIMOS - A TWO-DIMENSIONAL MOS-TRANSISTOR ANALYZER [J].

SELBERHERR, S ;

SCHUTZ, A ;

POTZL, HW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1540-1550

[5]

Takacs D., 1980, International Electron Devices Meeting. Technical Digest, P569

[6] VLSI LIMITATIONS FROM DRAIN-INDUCED BARRIER LOWERING [J].

TROUTMAN, RR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :383-391

[7] THRESHOLD-SENSITIVITY MINIMIZATION OF SHORT-CHANNEL MOSFETS BY COMPUTER-SIMULATION [J].

YOKOYAMA, K ;

YOSHII, A ;

HORIGUCHI, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1509-1514

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