HYPERFINE INTERACTION FOR P-RELATED DEFECTS IN P-DOPED A-SI-H AND A-SI1-XCX-H

被引：3

作者：

SHIMIZU, T ^{[1
]}

XU, XX ^{[1
]}

OHTA, T ^{[1
]}

KUMEDA, M ^{[1
]}

ISHII, N ^{[1
]}

机构：

[1] FUKUI INST TECHNOL,DEPT ELECT ENGN,FUKUI 910,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1988年 / 67卷 / 10期

关键词：

D O I：

10.1016/0038-1098(88)90461-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：941 / 944

页数：4

共 7 条

[1] HYPERFINE INTERACTION IN PHOSPHORUS-DOPED AMORPHOUS-SILICON GERMANIUM ALLOYS [J].

FINGER, F ;

FUHS, W ;

CARIUS, R .

PHILOSOPHICAL MAGAZINE LETTERS, 1988, 57 (04) :235-240

[2] P-31 NUCLEAR MAGNETIC-RESONANCE STUDY OF LOCAL BONDING CONFIGURATION OF PHOSPHORUS IN AMORPHOUS SILICON-HYDROGEN-PHOSPHORUS ALLOYS [J].

HAYASHI, S ;

HAYAMIZU, K ;

YAMASAKI, S ;

MATSUDA, A ;

TANAKA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (12) :L2041-L2043

[3] P-RELATED DEFECTS IN P-DOPED ALPHA-SI-H [J].

ISHII, N ;

KUMEDA, M ;

SHIMIZU, T .

SOLID STATE COMMUNICATIONS, 1985, 53 (06) :543-546

[4] DETAILED INVESTIGATION OF DOPING IN HYDROGENATED AMORPHOUS-SILICON AND GERMANIUM [J].

STUTZMANN, M ;

BIEGELSEN, DK ;

STREET, RA .

PHYSICAL REVIEW B, 1987, 35 (11) :5666-5701

[5] DONOR STATES IN HYDROGENATED AMORPHOUS-SILICON AND GERMANIUM [J].

STUTZMANN, M ;

STREET, RA .

PHYSICAL REVIEW LETTERS, 1985, 54 (16) :1836-1839

[6] ENERGY LOCATION OF ELECTRON-SPIN-RESONANCE HYPERFINE CENTERS OF P-DOPED A-SI-H [J].

YAMASAKI, S ;

KURODA, S ;

OKUSHI, H ;

TANAKA, K .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :339-342

[7]

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