ZENER BREAKDOWN IN ALLOYED GERMANIUM P+-N JUNCTIONS

被引：18

作者：

TOKUYAMA, T

机构：

来源：

SOLID-STATE ELECTRONICS | 1962年 / 5卷 / MAY-J期

关键词：

D O I：

10.1016/0038-1101(62)90007-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：161 / &

共 24 条

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FOY, PW .

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LEE, CA ;

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CHYNOWETH, AG ;

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ESAKI, L .

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[7] SOME EXPERIMENTS ON, AND A THEORY OF, SURFACE BREAKDOWN [J].

GARRETT, CGB ;

BRATTAIN, WH .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (03) :299-306

[8] VISIBLE LIGHT EMISSION AND MICROPLASMA PHENOMENA IN SILICON P-N JUNCTION .1. [J].

KIKUCHI, M ;

TACHIKAWA, K .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (05) :835-848

[9] BREAKDOWN EFFECT IN P-N ALLOY GERMANIUM JUNCTIONS [J].

KNOTT, RD ;

COLSON, ID ;

YOUNG, MRP .

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[10]

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