INVESTIGATION OF DISLOCATION MOBILITIES IN GERMANIUM IN THE LOW-TEMPERATURE RANGE BY INSITU STRAINING EXPERIMENTS

被引：47

作者：

LOUCHET, F ^{[1
]}

MUCHY, DC ^{[1
]}

BRECHET, Y ^{[1
]}

机构：

[1] CEN,DEPT MET,F-38041 GRENOBLE,FRANCE

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1988年 / 57卷 / 02期

关键词：

D O I：

10.1080/01418618808204518

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：327 / 335

页数：9

共 18 条

[1] EXPERIMENTAL-STUDY OF THE DOUBLE KINK FORMATION KINETICS AND KINK MOBILITY ON THE DISLOCATION LINE IN SI SINGLE-CRYSTALS
FARBER, BY
IUNIN, YL
NIKITENKO, VI
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1986, 97 (02): : 469 - 478
[2] A TEM INSITU STUDY OF DISLOCATION GLIDE IN A III-V-COMPOUND (INSB)
FNAIECH, M
REYNAUD, F
COURET, A
CAILLARD, D
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1987, 55 (04): : 405 - 423
[3] GADAUD P, 1987, IN PRESS J PHYS PARI
[4] GOTTSCHALK H, 1983, J PHYS PARIS, V9, P69
[5] CALCULATION OF THE LOCALIZED ELECTRONIC STATES ASSOCIATED WITH STATIC AND MOVING DISLOCATIONS IN SILICON
HEGGIE, M
JONES, R
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 48 (04): : 379 - 390
[6] Hirsch P.B., 1981, I PHYS C SER, V60, P29
[7] Hirth J.P., 1982, THEORY DISLOCATIONS
[8] HELIUM-TEMPERATURE ANNEALING OF ELECTRON-IRRADIATED N-TYPE GERMANIUM
HYATT, WD
KOEHLER, JS
[J]. PHYSICAL REVIEW B, 1971, 4 (06): : 1903 - &
[9] THE STRUCTURE OF KINKS ON THE 90-DEGREES PARTIAL IN SILICON AND A STRAINED-BOND MODEL FOR DISLOCATION-MOTION
JONES, R
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (02): : 213 - 219
[10] BERECHNUNG DES PEIERLSPOTENTIALS IM DIAMANTGITTER
LABUSCH, R
[J]. PHYSICA STATUS SOLIDI, 1965, 10 (02): : 645 - &