ROOM-TEMPERATURE IR PHOTODETECTOR WITH ELECTROMAGNETIC CARRIER DEPLETION

被引:16
作者
DJURIC, Z [1 ]
PIOTROWSKI, J [1 ]
机构
[1] VIGO LTD, WARSAW, POLAND
关键词
materials; Photodetectors; Semiconductor devices;
D O I
10.1049/el:19901080
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The practical implementation of ambient temperature InSb electromagnetically carrier-depleted (EMCD) IR photodetectors is reported. The device is a lightly doped InSb photoconductor with a high backside surface recombination velocity, placed in a magnetic field. The carrier concentration in the most part of the device is highly reduced because of the action of the Lorentz force. This results in saturation of the I/V characteristics and the possible suppression of Auger recombination. The practical EMCD InSb photoconductor has been manufactured and characterised. The saturation of the I/V characteristic and the increase of photoresponse by a factor of ~ 10 has been achieved using a static electrical field of ~30V/cm and a magnetic field of about 1-5 T. The EMCD devices promise fast photodetectors with high responsivity operating at room temperature. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码:1689 / 1691
页数:3
相关论文
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