TEMPERATURE DEPENDENCE OF HALL MOBILITY AND CARRIER CONCENTRATION IN SILICON-ON-SAPPHIRE FILMS

[1] THIN-FILM SILICON - PREPATATION, PROPERTIES, AND DEVICE APPLICATIONS [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1490 - +

[2] BHOLA SR, 1963, RCA REV, V24, P511

[3] Dumin D. J., 1968, Journal of Crystal Growth, V3-4, P214, DOI 10.1016/0022-0248(68)90133-4

[4] ELECTRICAL PROPERTIES OF SILICON FILMS GROWN EPITAXIALLY ON SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) : 1909 - &

[5] CARRIER TRANSPORT IN THIN SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) : 2759 - &

[6] DEEP LEVELS WITHIN FORBIDDEN GAP OF SILICON-ON-SAPPHIRE FILMS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (04) : 415 - &

[7] DUMIN DJ, 1969, B AM PHYS SOC, V14, P394

[8] MEASUREMENT OF FILM THICKNESS USING INFRARED INTERFERENCE [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1967, 38 (08) : 1107 - &

[9] AUTODOPING OF SILICON FILMS GROWN EPITAXIALLY ON SAPPHIRE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (05) : 469 - +

[10] DUMIN DJ, UNPUBLISHED DATA

[1] THIN-FILM SILICON - PREPATATION, PROPERTIES, AND DEVICE APPLICATIONS [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1490 - +

[2] BHOLA SR, 1963, RCA REV, V24, P511

[3] Dumin D. J., 1968, Journal of Crystal Growth, V3-4, P214, DOI 10.1016/0022-0248(68)90133-4

[4] ELECTRICAL PROPERTIES OF SILICON FILMS GROWN EPITAXIALLY ON SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) : 1909 - &

[5] CARRIER TRANSPORT IN THIN SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) : 2759 - &

[6] DEEP LEVELS WITHIN FORBIDDEN GAP OF SILICON-ON-SAPPHIRE FILMS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (04) : 415 - &

[7] DUMIN DJ, 1969, B AM PHYS SOC, V14, P394

[8] MEASUREMENT OF FILM THICKNESS USING INFRARED INTERFERENCE [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1967, 38 (08) : 1107 - &

[9] AUTODOPING OF SILICON FILMS GROWN EPITAXIALLY ON SAPPHIRE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (05) : 469 - +

[10] DUMIN DJ, UNPUBLISHED DATA