NANOSIZE STRUCTURES CONNECTIVITY IN POROUS SILICON AND ITS RELATION TO PHOTOLUMINESCENCE EFFICIENCY

被引：24

作者：

TESCHKE, O

ALVAREZ, F

TESSLER, L

KLEINKE, MU

机构：

[1] Instituto de Fisica, Campinas, SP

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 14期

关键词：

D O I：

10.1063/1.110651

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transmission electron microscopy is used to reveal the existence of an interconnected nanosize structure in porous silicon films. The interconnections of this nanostructure determine the photoexcited electron-hole pair separation and consequently the luminescence efficiency of the material. Efficient photoluminescence is obtained from structures which shows no connectivity.

引用

页码：1927 / 1929

页数：3

共 19 条

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