LUMINESCENT CHARACTERIZATION OF RADIATION-DAMAGE AND IMPURITIES IN ION-IMPLANTED NATURAL DIAMOND

被引：20

作者：

GIPPIUS, AA

机构：

[1] P. N. Lebedev Physical Institute, Academy of Sciences of Russia, Moscow, 117924

来源：

关键词：

D O I：

10.1016/0925-9635(93)90196-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results of luminescent studies of ion-implanted layers of natural diamond are presented. It is shown that transition elements luminescent ''probes'' can provide valuable information about lattice disorder, defect-impurity interaction etc. Reactions involving implanted impurities, radiation defects and background impurities in ion-implanted natural diamonds are discussed with the emphasis on high local density of defects produced by displacement cascades. The results are directly related to problems of implantation doping and hydrogenation of diamond.

引用

页码：640 / 645

页数：6

共 19 条

[1] PARTIAL DISSOCIATION OF NITROGEN AGGREGATES IN DIAMOND BY HIGH TEMPERATURE-HIGH PRESSURE TREATMENTS [J].