CHARGE MOTION IN SILICON MOS STRUCTURES

被引：8

作者：

NEMETHSALLAY, M

SZABO, R

SZEP, IC

TUTTO, P

机构：

来源：

THIN SOLID FILMS | 1980年 / 70卷 / 01期

关键词：

D O I：

10.1016/0040-6090(80)90409-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：37 / 41

页数：5

共 12 条

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[2]

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[5]

GUTHRIE JW, 1975, DIELECTRICS INSULATI, P349

[6] ROOM-TEMPERATURE TRANSFORMATIONS IN SIO2 LAYERS INDUCED BY CHEMICAL-COMPOUNDS .2. [J].

HOFFMANN, G ;

LORINCZY, A ;

NEMETHSALLAY, M ;

SZEP, IC .

THIN SOLID FILMS, 1979, 59 (03) :319-325

[7] INVESTIGATION OF MOBILE IONS IN MOS STRUCTURES USING TSIC METHOD [J].

NAUTA, PK ;

HILLEN, MW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2862-2865

[8]

NEMETHSALLAY M, 1978, 3RD S SOL STAT DEV T

[9]

NEMETHSALLAY M, 1978, EUROPEAN SOLID STATE, P398

[10] ROLE OF HYDROGEN IN SIO2-FILMS ON SILICON [J].

REVESZ, AG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (01) :122-130

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