ROOM-TEMPERATURE TRANSFORMATIONS INDUCED IN SIO2 LAYERS BY CHEMICAL-COMPOUNDS .1.

被引：6

作者：

BARNA, A ^{[1
]}

NEMETHSALLAY, M ^{[1
]}

SZEP, IC ^{[1
]}

DIDENKO, PI ^{[1
]}

LITOVCHENKO, VG ^{[1
]}

MARCHENKO, PI ^{[1
]}

ROMANOVA, GF ^{[1
]}

机构：

[1] ACAD SCI UKSSR,INST SEMICOND,KIEV,UKSSR

来源：

THIN SOLID FILMS | 1978年 / 55卷 / 03期

关键词：

D O I：

10.1016/0040-6090(78)90152-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：355 / 360

页数：6

共 13 条

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[2]

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[4]

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[5]

LITOVCHENKO VG, 1972, 2ND P SOV C INT AT P, P154

[6]

LITOVCHENKO VG, 1976, 4TH P SOV C INT AT P, P90

[7]

LITOVCHENKO VG, 1973, POLUPROVODN TEKH MIK, V11, P20

[8] SECONDARY ION EMISSION FROM SILICON AND SILICON-OXIDE [J].

MAUL, J ;

WITTMAACK, K .

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[9] DEVITRIFICATION OF STEAM-GROWN SILICON DIOXIDE FILMS [J].

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BRAUN, RH .

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[10]

NEMETHSALLAI M, 1977, PHYS STATUS SOLIDI A, V43, P135

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