HIGHLY SENSITIVE NPNP OPTOELECTRONIC SWITCH BY ALAS REGROWTH

被引：18

作者：

KUIJK, M ^{[1
]}

HEREMANS, P ^{[1
]}

BORGHS, G ^{[1
]}

机构：

[1] INTERUNIV MICROELECTR CTR,B-3001 LOUVAIN,BELGIUM

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 05期

关键词：

D O I：

10.1063/1.105418

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A double-heterostructure NpnP optoelectronic switching device, with an extreme optical sensitivity and low holding power, has been fabricated. A decrease in breakover voltage of 650 mV is obtained at a light illumination of only 5 nW for a 50 x 50-mu-m2 device. To achieve this high sensitivity, the surface generation/recombination currents at the edges of the devices have been reduced by passivating the device perimeter with a regrowth of 50 nm AlAs (lowly p doped).

引用

页码：497 / 498

页数：2

共 9 条

[1] DIFFERENTIAL OPTICAL SWITCHING AT SUBNANOWATT INPUT POWER [J].