THE SURFACE OF SI(111) DURING ETCHING IN NAOH STUDIED BY FTIR SPECTROSCOPY IN THE ATR TECHNIQUE

被引：53

作者：

RAPPICH, J ^{[1
]}

LEWERENZ, HJ ^{[1
]}

GERISCHER, H ^{[1
]}

机构：

[1] MAX PLANCK GESELL,FRITZ HABER INST,D-14195 BERLIN,GERMANY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 12期

关键词：

D O I：

10.1149/1.2221161

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The Fourier transform infrared spectroscopy-attenuated total reflectance spectra give a direct proof that the Si surface remains covered by Si-H bonds in spite of the high etching rate in alkaline solutions. It confirms the chemical mechanism of the etching of silicon in such solutions where hydrolysis of Si-H and Si-Si bonds controls the kinetics.

引用

页码：L187 / L189

页数：3

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