SPACE CHARGE LIMITED CORRENTS IN P-N JUNCTIONS

The system of partial differential equations which describes the motion of charge carriers inside the space charge region of an inversely biased p-n junction is numerically solved, taking into account the influence of the density of electron-hole pairs on the electric field. It is shown that there are remarkable variations in the theoretically predicted current signals when the density is raised. Particularly interesting is the appearance of a peak closely resembling the one predicted by the theory of SCL currents in insulators. The time position of the above mentioned peak is not influenced by diffusion (at least when a realistic order of magnitude is considered for the diffusion term). These theoretical previsions could be very useful in the study of charge transport in semiconductors at low fields. © 1969.