EXPERIMENTAL RESULTS ON DRIFT VELOCITY OF HOT CARRIERS IN SILICON AND ASSOCIATED ANISOTROPIC EFFECTS

被引：15

作者：

QUARANTA, AA

MARTINI, M

OTTAVIANI, G

REDAELLI, G

ZANARINI, G

机构：

来源：

SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 07期

关键词：

D O I：

10.1016/0038-1101(68)90072-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：685 / +

页数：1

共 21 条

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[8] TOTALLY DEPLETED SURFACE SILICON DETECTORS - CONSTRUCTION AND PROPERTIES [J].

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[9] CONDUCTIVITY ANISOTROPY OF HOT ELECTRONS IN N-TYPE SILICON HEATED BY MICROWAVE FIELDS [J].

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[10]

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