SUPPRESSION OF ACCEPTOR DEACTIVATION IN SILICON BY ARGON-ION IMPLANTATION DAMAGE

被引：6

作者：

ASHOK, S ^{[1
]}

SRIKANTH, K ^{[1
]}

机构：

[1] PENN STATE UNIV, DEPT ENGN SCI & MECH, UNIVERSITY PK, PA 16802 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 03期

关键词：

D O I：

10.1063/1.344407

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1491 / 1494

页数：4

共 13 条

[1] INFLUENCE OF LOW-ENERGY ATOMIC-HYDROGEN ON ARGON-IMPLANTED SILICON SCHOTTKY BARRIERS [J].

ASHOK, S ;

GIEWONT, K .

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[2] TEMPERATURE-DEPENDENCE OF HYDROGEN IMPLANT ON PASSIVATION OF ARGON IMPLANT DAMAGE IN SILICON [J].

CHIEN, HC ;

ASHOK, S ;

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[3] ARGON-ION IMPLANTATION DAMAGE STUDIES IN SILICON SCHOTTKY BARRIERS USING ANODIC-OXIDATION ETCHING [J].

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ASHOK, S .

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[5] PERMEATION OF HYDROGEN INTO SILICON DURING LOW-ENERGY HYDROGEN-ION BEAM BOMBARDMENT [J].

HORN, MW ;

HEDDLESON, JM ;

FONASH, SJ .

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[6] MECHANISM FOR HYDROGEN COMPENSATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].

JOHNSON, NM .

PHYSICAL REVIEW B, 1985, 31 (08) :5525-5528

[7] HOLE-MEDIATED CHEMISORPTION OF ATOMIC-HYDROGEN IN SILICON [J].

PANKOVE, JI ;

MAGEE, CW ;

WANCE, RO .

APPLIED PHYSICS LETTERS, 1985, 47 (07) :748-750

[8] NEUTRALIZATION OF ACCEPTORS IN SILICON BY ATOMIC-HYDROGEN [J].

PANKOVE, JI ;

WANCE, RO ;

BERKEYHEISER, JE .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1100-1102

[9] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS [J].

PEARTON, SJ ;

CORBETT, JW ;

SHI, TS .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (03) :153-195

[10] DEACTIVATION OF THE BORON ACCEPTOR IN SILICON BY HYDROGEN [J].

SAH, CT ;

SUN, JY ;

TZOU, JJ .

APPLIED PHYSICS LETTERS, 1983, 43 (02) :204-206

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